Getestet, tadellos.

HyperX HX316C10FBK2/8 is a kit of two 512M x 64-bit (4GB)
DDR3-1600 CL10 SDRAM (Synchronous DRAM) 1Rx8 memory
modules, based on eight 512M x 8-bit DDR3 FBGA components
per module. Total kit capacity is 8GB. Each module kit has
been tested to run at DDR3-1600 at a low latency timing of
10-10-10 at 1.5V. Additional timing parameters are shown in
the PnP Timing Parameters section below.

PnP JEDEC TIMING PARAMETERS:
• DDR3-1600 CL10-10-10 @1.5V
• DDR3-1333 CL9-9-9 @1.5V
• DDR3-1066 CL7-7-7 @1.5V

SPECIFICATIONS
CL(IDD) 10 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 37.5ns (min.)
Maximum Operating Power TBD W* (per module)
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o C
Storage Temperature -55o
C to +100o C
*Power will vary depending on the SDRAM used.
FEATURES
• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• Height 1.291” (32.80mm) w/heatsink, single sided
component